A high-responswity, low-capacitance and high-speed metal-semiconductor-metal photodetector (MSM-PD) with layer structure ln,,8sGao~ls P / InP / InGaAs / InP has been fabricated and characterized. For a 50 p m X 50 p m device with 2-pm finger width and 2-pm finger spacing we obtained a front illumina
✦ LIBER ✦
High performance InPInGaAs-BASED MSM photodetector operating at 1.3-1.5 μm
✍ Scribed by K.C. Song; M.A. Matin; B. Robinson; J.G. Simmons; D.A. Thompson; P. Mascher
- Book ID
- 103395338
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 487 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0038-1101
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