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High-Performance Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistor With a Self-Aligned Etch Stopper Patterned by Back-Side UV Exposure

✍ Scribed by D. Geng; D. H. Kang; J. Jang


Book ID
126757516
Publisher
IEEE
Year
2011
Tongue
English
Weight
367 KB
Volume
32
Category
Article
ISSN
0741-3106

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