High-performance 0.1-μm gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology

✍ Scribed by Suemitsu, T.; Yokoyama, H.; Umeda, Y.; Enoki, T.; Ishii, Y.

• Book ID: 114537729
• Publisher: IEEE
• Year: 1999
• Tongue: English
• Weight: 211 KB
• Volume: 46
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.766866