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High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes

✍ Scribed by Zhao, Yuji; Tanaka, Shinichi; Yan, Qimin; Huang, Chia-Yen; Chung, Roy B.; Pan, Chih-Chien; Fujito, Kenji; Feezell, Daniel; Van de Walle, Chris G.; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji


Book ID
121348682
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
841 KB
Volume
99
Category
Article
ISSN
0003-6951

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## Abstract The non‐polar m‐plane InGaN/GaN light‐emitting diodes (LEDs) grown by metal‐organic chemical vapor deposition (MOCVD) on LiAlO~2~(100) substrates were investigated. The structure of LEDs is composed by GaN p–n junction and five InGaN/GaN multiple quantum wells (MQWs). They emit blue or