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High mobility in a two dimensional electron system with a thinned barrier

โœ Scribed by Youn Ho Park; Hyun Cheol Koo; Joonyeon Chang; Suk-Hee Han; Mark Johnson

Book ID
113915495
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
293 KB
Volume
151
Category
Article
ISSN
0038-1098

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Enhancement of two-dimensional electron
Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers
โœ Hashimoto, Shin ;Akita, Katsushi ;Yamamoto, Yoshiyuki ;Ueno, Masaki ;Nakamura, T ๐Ÿ“‚ Article ๐Ÿ“… 2012 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 328 KB

## Abstract We have demonstrated a high sheet carrier concentration in AlGaNโ€channel highโ€electronโ€mobility transistors (HEMTs) with AlN barrier layer. We investigate the epitaxial structure of these HEMTs by Xโ€ray diffraction and reveal that the partial lattice relaxation occurs in the Al~0.51~GaN