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High mobility hole gas and valence‐band offset in modulation‐doped p‐AlGaAs/GaAs heterojunctions

✍ Scribed by Wang, W. I.; Mendez, E. E.; Stern, Frank


Book ID
115446317
Publisher
American Institute of Physics
Year
1984
Tongue
English
Weight
486 KB
Volume
45
Category
Article
ISSN
0003-6951

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