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High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

โœ Scribed by Kim, Sunkook (author);Konar, Aniruddha (author);Hwang, Wan Sik (author);Lee, Jong Hak (author);Lee, Jiyoul (author);Yang, Jaehyun (author);Jung, Changhoon (author);Kim, Hyoungsub (author);Yoo, Ji Beom (author);Choi, Jae Young (author);Jin, Yong Wan (author);Lee, Sang Yoon (author);Jena, Debdeep (author);Choi, Woong (author);Kim, Kinam (author)

Book ID
115443498
Publisher
Nature Publishing Group
Year
2012
Tongue
English
Weight
672 KB
Volume
3
Category
Article
ISSN
2041-1723

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W and L are, respectively, the semiconductor channel width and length, C i is the capacitance per unit area of the gate dielectric layer, and V G and V T are, respectively, the gate voltage and threshold voltage. V T of the device was determined from the relationship between the square root of I SD