Traditionally, inorganic materials have been the active charge-transporting components in numerous electronic devices. While inorganic materials are ideal for many applications, the rapid development of molecular/polymeric semiconductors for organic field-effect transistors (OFETs) promises materials better suited to inexpensive, flexible, large-area applications, such as displays, RF-ID tags, smart cards, and sensors. [1] To this end, recent advances in p-type organic semiconductors have fulfilled many of the requirements for use in diverse applications; [1c-e, 2] however, n-type materials, needed for complementary circuits, continue to present challenges, such as low mobilities, instability in air, poor solubility for efficient film-casting, and large barriers to electron injection. [1b, 2] We have already demonstrated that high-mobility n-type organic semiconductors can be realized by functionalizing oligothiophene cores with electron-withdrawing perfluorinated groups (e.g. DFT-4T and FTTTTF). [3] Furthermore, other research has demonstrated that electron-withdrawing imide substituents afford promising architectures for n-type naphthalene and perylene-based OFET materials (e.g., NDI and PDI). [4] Thus, vapor-deposited and solution-cast films of N-fluorocarbon NDI derivatives exhibit air-stable n-type mobilities as high as 0.1 cm 2 V ร1 s ร1 , I on /I off % 10 5 , and threshold voltages of approximately 20 V. [4f-h] However, while Nalkyl NDI derivatives exhibit comparable or superior electrical performance, they fail to operate in air, possibly because of the less densely packed hydrocarbon tails. [4f] While N-alkyl PDI films exhibit outstanding mobilities of approximately 0.6 cm 2 V ร1 s ร1 , OFET performance again degrades in air, [