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High Microwave and Noise Performance of 0.17-<tex>$muhbox m$</tex>AlGaN–GaN HEMTs on High-Resistivity Silicon Substrates

✍ Scribed by Minko, A.; Hoel, V.; Lepilliet, S.; Dambrine, G.; DeJaeger, J.C.; Cordier, Y.; Semond, F.; Natali, F.; Massies, J.; Massies, J.


Book ID
121409581
Publisher
IEEE
Year
2004
Tongue
English
Weight
152 KB
Volume
25
Category
Article
ISSN
0741-3106

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