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High luminescent Eu3 and Tb3 doped SnO2 sol–gel derived films deposited on porous silicon

✍ Scribed by Elhouichet, H. ;Moadhen, A. ;Férid, M. ;Oueslati, M. ;Canut, B. ;Roger, J. A.


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
172 KB
Volume
197
Category
Article
ISSN
0031-8965

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## Abstract Tin dioxide doped with antimony (SnO~2~:Sb) and sol–gel doped with terbium (Tb^3+^) were deposited on porous silicon (PS) layers and on monocrystalline Si wafers. Energy dispersive X‐ray (EDX) analysis and Auger electron spectroscopy (AES) show the presence of tin, oxygen and terbium i

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