High Hole Mobility in Strained Germanium-Tin (GeSn) Channel pMOSFET Fabricated on (111) Substrate

✍ Scribed by Han, G.; Su, S.; Yang, Y.; Guo, P.; Gong, X.; Wang, L.; Wang, W.; Guo, C.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y. C.

• Book ID: 121375768
• Publisher: The Electrochemical Society
• Year: 2013
• Tongue: English
• Weight: 515 KB
• Volume: 50
• Category: Article
• ISSN: 1938-6737
• DOI: 10.1149/05009.0943ecst