๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

High hole mobility from thiophene-thienopyrazine copolymer based thin film transistors

โœ Scribed by Wen-Ya Lee; Kai-Fang Cheng; Cheng-Liang Liu; Sung-Tso Lin; Chu-Chen Chueh; Feng-Yu Tsai; Wen-Chang Chen


Book ID
106438512
Publisher
Springer
Year
2008
Tongue
English
Weight
379 KB
Volume
16
Category
Article
ISSN
1022-9760

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


A Low-Bandgap Diketopyrrolopyrrole-Benzo
โœ Prashant Sonar; Samarendra P. Singh; Yuning Li; Mui Siang Soh; Ananth Dodabalapu ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 381 KB ๐Ÿ‘ 1 views

W and L are, respectively, the semiconductor channel width and length, C i is the capacitance per unit area of the gate dielectric layer, and V G and V T are, respectively, the gate voltage and threshold voltage. V T of the device was determined from the relationship between the square root of I SD