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High gain (P) AlGaAs(N) GaAs heterojunction avalanche photodiodes

✍ Scribed by J. Novák; M. Morvic; P. Kordoš


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
219 KB
Volume
25
Category
Article
ISSN
0038-1101

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Current gain deterioration in carbon-dop
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We investigated the current gain deterioration in carbon-doped AIGaAs/GaAs heterojunction bipolar transitors (HBTs). Bias stress tests showed that mechanical stress can accelerate the gain reduction, since HBTs with a thicker SiN passivation layer have a shorter device life. The longest life was obt