Compensation by deep-level defects and self-compensation of shallow donors in AlN are discussed in the light of results of a high-frequency pulse electron paramagnetic resonance (EPR) and electronnuclear double resonance (ENDOR) study. It was suggested on the basis of the large mostly isotropic hype
High-frequency EPR and ENDOR spectroscopy on semiconductor nanocrystals
✍ Scribed by S. B. Orlinskii; H. Blok; E. J. J. Groenen; J. Schmidt; P. G. Baranov; C. de Mello Donegá; A. Meijerink
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 315 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0749-1581
- DOI
- 10.1002/mrc.1686
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