Current instabilities in the Auger trans
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E.V. Ostroumova; A.A. Rogachev
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Article
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1998
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Elsevier Science
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English
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The paper is devoted to the investigation of current instabilities in the A1-SiO2-n-Si Auger transistor. We succeeded for the first time in creating the Auger transistor, in which we used a metal-insulator heterojunction instead of a widegap semiconductor. The Auger transistor base is created by the