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High-frequency current instabilities in a silicon Auger transistor

โœ Scribed by E. V. Ostroumova; A. A. Rogachev


Book ID
110120187
Publisher
Springer
Year
1999
Tongue
English
Weight
50 KB
Volume
33
Category
Article
ISSN
1063-7826

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Current instabilities in the Auger trans
โœ E.V. Ostroumova; A.A. Rogachev ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 655 KB

The paper is devoted to the investigation of current instabilities in the A1-SiO2-n-Si Auger transistor. We succeeded for the first time in creating the Auger transistor, in which we used a metal-insulator heterojunction instead of a widegap semiconductor. The Auger transistor base is created by the