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High frequency C-V investigation of metal-oxide-semiconductor capacitors prepared by low temperature subatmospheric pressure chemical vapour deposition of SiO2 films on silicon substrates

✍ Scribed by C. Pavelescu; J.P. McVittie; C. Chang; K.C. Saraswat; J.Y. Leong


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
593 KB
Volume
217
Category
Article
ISSN
0040-6090

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