High-Frequency Bipolar Transistors: Physics, Modeling, Applications

✍ Scribed by Professor Dr. Michael Reisch (auth.)

Publisher: Springer-Verlag Berlin Heidelberg
Year: 2003
Tongue: English
Leaves: 670
Series: Springer Series in Advanced Microelectronics 11
Edition: 1
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis given to todays advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate student level. The second part considers the physics and modeling of bipolar transistors in detail. Part 3 describes basic circuit configurations, aspects of process integration and applications.

✦ Table of Contents

Front Matter....Pages II-XX
Front Matter....Pages 1-1
An Introductory Survey....Pages 3-116
Front Matter....Pages 117-117
Semiconductor Physics Required for Bipolar-Transistor Modeling....Pages 119-174
Physics and Modeling of Bipolar Junction Transistors....Pages 175-358
Physics and Modeling of Heterojunction Bipolar Transistors....Pages 359-410
Noise Modeling....Pages 411-459
Front Matter....Pages 461-461
Basic Circuit Configurations....Pages 463-509
Process Integration....Pages 511-550
Applications....Pages 551-574
Back Matter....Pages 575-658

✦ Subjects

Electronics and Microelectronics, Instrumentation; Microwaves, RF and Optical Engineering

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