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High-fmax collector-up AlGaAs/GaAs heterojunction bipolar transistors with heavily carbon-doped base fabricated by oxygen-ion implantation

✍ Scribed by Yamahata, S.; Matsuoka, Y.; Ishibashi, T.


Book ID
114534910
Publisher
IEEE
Year
1992
Tongue
English
Weight
270 KB
Volume
39
Category
Article
ISSN
0018-9383

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