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High field transport in semiconductors. The drifted Maxwellian approach. I. general theory

✍ Scribed by T. Y. Stokoe; J. F. Cornwell

Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
464 KB
Volume
49
Category
Article
ISSN
0370-1972

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πŸ“œ SIMILAR VOLUMES

High field transport in semiconductors.
High field transport in semiconductors. The drifted maxwellian approach. II. Application to n-Insb
✍ T. Y. Stokoe; J. F. Cornwell πŸ“‚ Article πŸ“… 1972 πŸ› John Wiley and Sons 🌐 English βš– 478 KB

## Abstract The drifted Maxwellian approach to the transport properties of semiconductors is applied to Insb at high and low fields assuming Kane's model. Polar optical, acoustic, and ionised impurity scattering mechanisms are considered with band structure non‐parabolicity and the mixing of Bloch