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High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor

โœ Scribed by C. Cercignani; I.M. Gamba; C.D. Levermore


Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
469 KB
Volume
10
Category
Article
ISSN
0893-9659

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โœฆ Synopsis


Communicated by P. A. Markowich

Abstract--We consider the Boltzmann-Poisson system for electrons in a semiconductor in the case of high fields and small devices. We discuss closures of moment equations and boundary conditions for both the distribution function and the moments.


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