High energy oxygen ion induced modifications in lead based perovskite thin films

✍ Scribed by V.M. Jali; Basavaraj Angadi; P. Venkateswarlu; Ravi Kumar; S.B. Krupanidhi

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 862 KB
• Volume: 260
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2007.04.126

✦ Synopsis

The lead based ferroelectric PbZr 0.53 Ti 0.47 O 3 (PZT), (Pb 0.90 La 0.10 )TiO 3 (PLT10) and (Pb 0.80 La 0.20 )TiO 3 (PLT20) thin films, prepared by pulsed laser ablation technique, were studied for their response to the 70 MeV oxygen ion irradiation. The dielectric analysis, capacitance-voltage (C-V) and DC leakage current measurements were performed before and after the irradiation to high-energy oxygen ions. The irradiation produced considerable changes in the dielectric, C-V, leakage characteristics and induced some amount of amorphization. The PZT films showed partial recrystallization after a thermal annealing at 400 °C for 10 min. The phase transition temperature [T c ] of PLT20 increased from 115 °C to 120 °C. The DC conductivity measurements showed a shift in the onset of non-linear conduction region. The current density decreased by two orders of magnitude after irradiation. After annealing the irradiated films at a temperature of 400 °C for 10 min, the films partially regained the dielectric and electrical properties. The results are discussed in terms of the irradiation-induced amorphization, the pinning of the ferroelectric domains by trapped charges and the thermal annealing of the defects generated during the irradiation.