High-efficiency tapered distributed power amplifier with 2-μm GaAs HBT process
✍ Scribed by Jian Xu; Zhi-Gong Wang; Ying Zhang; Li Ma
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 483 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
An integrated power distributed amplifier, fabricated in a low‐cost 2‐μm GaAs heterojunction bipolar transistor (HBT) technology, is implemented in this letter. A tapered collector line structure combined with the input capacitive coupling technique is used to improve the bandwidth and power efficiency simultaneously. The measurement results give a gain of 8.1dB with a gain flatness of ±0.5dB over a frequency range from 1 to 12 GHz. The output 1‐dB compressing point is 13.9 dBm at 5 GHz and the associated power‐added efficiency is 21.9%. Our work presents very good figure of merit among the recently published distribution amplifiers with different technologies. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26126