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High-efficiency drift-field thin-film silicon solar cells grown on electronically inactive substrates

✍ Scribed by G.F. Zheng; W. Zhang; Z. Shi; D. Thorp; R.B. Bergmann; M.A. Green

Book ID
108472607
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
536 KB
Volume
51
Category
Article
ISSN
0927-0248

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98/01407 High-efficiency drift-field thi
98/01407 High-efficiency drift-field thin-film silicon solar cells grown on electronically inactive substrates: Zheng, G. F. et al. Solar Energy Materials and Solar Cells, 1998, 51, (1), 95–104
πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science βš– 402 KB

is designed to obtain a high quality GaAs layer on Ge substrate by metalorganic chemical vapour deposition (MOCVD). Performance of a GaAs solar cell fabricated on Ge substrate with the buffer layer structure was compared with that with a conventional GaAs buffer layer and also that fabricated on GaA