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High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

✍ Scribed by Luo, X.; Oh, Y. S.; Sirenko, A.; Gao, P.; Tyson, T. A.; Char, K.; Cheong, S.-W.

Book ID
120816388
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
929 KB
Volume
100
Category
Article
ISSN
0003-6951

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Transport in high mobility amorphous wid
Transport in high mobility amorphous wide band gap indium zinc oxide films
✍ Martins, R. ;Barquinha, P. ;Pimentel, A. ;Pereira, L. ;Fortunato, E. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 176 KB

## Abstract This paper discusses the electron transport in the n‐type amorphous indium–zinc–oxygen system produced at room temperature by rf magnetron sputtering, under different oxygen partial pressures. The data show that the transport is not band tail limited, as it happens in conventional disor