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High beginning-of-life efficiency p/n InP solar cells

✍ Scribed by Richard W. Hoffman Jr; Navid S. Fatemi; Victor G. Weizer; Phillip P. Jenkins; Mark A. Stan; Steven A. Ringel; David A. Scheiman; David M. Wilt; David J. Brinker

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
195 KB
Volume
5
Category
Article
ISSN
1062-7995

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✦ Synopsis

The high electrical conversion performance and radiation resistance of InP solar cells was discovered during the last decade. The combination of these two characteristics makes InP a very attractive material for space solar cells. To date, the best performance results for both homo-epitaxial and hetero-epitaxial InP solar cells were achieved using an n/p con®guration. The p/n con®guration is desirable for hetero-epitaxial growth on inexpensive, strong, lightweight group IV substrates such as Si and Ge. Furthermore, diused-junction p/n cells demonstrated a higher radiation resistance than the n/p con®guration cells; however, the testing of the p/n con®guration was limited to lower quality cells as judged by their beginning-of-life (BOL) eciencies. We have succeeded in developing p/n con®guration homo-epitaxy InP solar cells with BOL eciency values exceeding 17 . 6% tested under air mass zero (AM0) conditions. The high eciency values obtained from our cells resulted from improved emitter performance, which was due to better control of the growth of Zn-doped p-type InP.

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