AlGaN hexagonal nano-pyramids were formed on GaN/sapphire, AlN/sapphire and Al 0.5 Ga 0.5 N/sapphire using selective area heteroepitaxy. It is found that both interfacial strain due to the lattice mismatch and the growth conditions greatly impact growth rate, Al incorporation and facet quality of th
β¦ LIBER β¦
Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation
β Scribed by Achim Trampert
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 272 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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In material sciences solid materials are known to be more or less dispersive, i.e., the Modulus of Elasticity, MOE, and the loss factor Ξ· are frequency dependent. Furthermore, these two parameters are not totally independent of each other as their frequency variations exhibit some interrelationship.