Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part I: band structure in the polysilicon emitter obtained from electrical measurements

✍ Scribed by Kondo, M.; Kobayashi, T.; Tamaki, Y.

• Book ID: 114535977
• Publisher: IEEE
• Year: 1995
• Tongue: English
• Weight: 828 KB
• Volume: 42
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.368038