Hemispherical thin-film transistor passive pixel sensors

✍ Scribed by Geonwook Yoo; Tze-ching Fung; Daniela Radtke; Marko Stumpf; Uwe Zeitner; Jerzy Kanicki

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 530 KB
• Volume: 158
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/j.sna.2009.11.019

✦ Synopsis

Hemispherical image sensors are very promising technology for cameras, surveillance systems and artificial vision. We report on the electrical performance of the hydrogenated amorphous silicon thin-film transistor passive pixel image sensor (PPS) circuits fabricated on a hemispherical substrate using maskless laser-write lithography (LWL). The level-to-level registration and alignment over the curved surface with a high accuracy are demonstrated for the LWL in this work. The obtained results clearly show that it is possible to realize active-matrix PPS with a 150 m pixel pitch and a dynamic range of about 40 dB that is suitable for hemispherical image sensors.