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Helicon method for investigation of many-valley semiconductors

✍ Scribed by R. B. Tolutis; V. L. Riauka; Yu. K. Pozhela

Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
364 KB
Volume
42
Category
Article
ISSN
0370-1972

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✦ Synopsis

Abstract

A theoretical and experimental analysis of dispersion, polarization, and size resonance frequency of helicon waves in many‐valley semiconductors is made under various assumptions with respect to the structure of the valleys. A new technique to measure carrier concentration, mobility, and coefficient of mobility anisotropy, K, is proposed. The dependence of the dispersion of the helicon waves upon carrier intervalley repopulation in n‐Ge subjected to uniaxial compression P at 78 Β°K is discussed theoretically along with experimental results. The possibility to measure transverse mobility is shown. The dependence of K on P is observed.

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## Abstract The Faraday ellipticity of hot electrons is investigated in the infrared region for the case of many‐valley semiconductors. It is shown that the anisotropy in ellipticity is independent of the magnitude and direction of the external magnetic field in the linear approximation. The increa