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Heavy ion induced damage in NaCl and KCl crystals

✍ Scribed by M. Enculescu; K. Schwartz; C. Trautmann; M. Toulemonde


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
524 KB
Volume
229
Category
Article
ISSN
0168-583X

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Silicon carbide (SiC) is a very promising material for future electronic devices. Also it is an attractive material for space applications, that require long-term endurance and higher efficiency, where tolerance to space radiations is a major problem. In this study, we have performed some irradiatio