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Heavy carbon doping of AlAs by elemental-source molecular beam epitaxy

✍ Scribed by A. Fischer; K. H. Ploog

Book ID
104726316
Publisher
Springer
Year
1993
Tongue
English
Weight
306 KB
Volume
57
Category
Article
ISSN
1432-0630

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## Abstract The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000–1100 °C, as confirmed by low