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Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures

✍ Scribed by Chavanapranee, Tosaporn; Horikoshi, Yoshiji

Book ID: 118171892
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 434 KB
Volume: 100
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2338127

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