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$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications

✍ Scribed by S. Monaghan; K. Cherkaoui; E. O'connor; V. Djara; P. Hurley; L. Oberbeck; E. Tois; L. Wilde; S. Teichert


Book ID
126654562
Publisher
IEEE
Year
2009
Tongue
English
Weight
250 KB
Volume
30
Category
Article
ISSN
0741-3106

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