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[Hartung-Gorre Verlag ISPSD'94 International Symposium on Power Semiconductor Devices and IC's - Davos, Switzerland (31 May-2 June 1994)] Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics - High voltage trench drain LDMOS-FET using SOI wafer

✍ Scribed by Baba, Y.; Yanagiya, S.; Koshino, Y.; Udo, Y.

Book ID: 126639082
Publisher: Hartung-Gorre Verlag
Year: 1994
Weight: 386 KB
Category: Article
ISBN-13: 9783891917848
DOI: 10.1109/ISPSD.1994.583700

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