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Hard x-ray photoelectron spectroscopy as a probe of the intrinsic electronic properties of CdO

✍ Scribed by Mudd, J. J.; Lee, Tien-Lin; Muñoz-Sanjosé, V.; Zúñiga-Pérez, J.; Hesp, D.; Kahk, J. M.; Payne, D. J.; Egdell, R. G.; McConville, C. F.

Book ID
121737663
Publisher
The American Physical Society
Year
2014
Tongue
English
Weight
381 KB
Volume
89
Category
Article
ISSN
1098-0121

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The ternary hafnium silicon arsenide, Hf(Si x As 1Àx )As, has been synthesized with a phase width of 0.5pxp0.7. Single-crystal X-ray diffraction studies on Hf(Si 0.5 As 0.5 )As showed that it adopts the ZrSiS-type structure (Pearson symbol tP6, space group P4/nmm, Z ¼ 2, a ¼ 3.6410(5) A ˚, c ¼ 8.155