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โœฆ   LIBER   โœฆ

๐Ÿ“

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1


Publisher
Wiley-VCH Verlag GmbH
Year
2000
Tongue
English
Leaves
833
Category
Library

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โœฆ Synopsis


Covering the structure and properties of semiconductors, this volume places particular emphasis on concepts relevant to semiconductor technology. Of interest to physicists and engineers in research and in the electronics industry, this is a valuable reference source and state-of-the-art review by the world's top authors.

Content:
Chapter 1 Band Theory Applied to Semiconductors (pages 1โ€“67): Michel Lannoo
Chapter 2 Optical Properties and Charge Transport (pages 69โ€“120): R. G. Ulbrich
Chapter 3 Intrinsic Point Defects in Semiconductors 1999 (pages 121โ€“165): George D. Watkins
Chapter 4 Deep Centers in Semiconductors (pages 167โ€“229): Helmut Feichtinger
Chapter 5 Point Defects, Diffusion, and Precipitation (pages 231โ€“290): T. Y. Tan and U. Gosele
Chapter 6 Dislocations (pages 291โ€“376): Helmut Alexander and Helmar Teichler
Chapter 7 Grain Boundaries in Semiconductors (pages 377โ€“451): Jany Thibault, Jean?Luc Rouviere and Alain Bourret
Chapter 8 Interfaces (pages 453โ€“540): R. Hull, A. Ourmazd, W. D. Rau, P. Schwander, M. L. Green and R. T. Tung
Chapter 9 Material Properties of Hydrogenated Amorphous Silicon (pages 541โ€“595): R. A. Street and K. Winer
Chapter 10 High?Temperature Properties of Transition Elements in Silicon (pages 597โ€“660): Wolfgang Schroter, Michael Seibt and Dieter Gilles
Chapter 11 Fundamental Aspects of SiC (pages 661โ€“713): Wolfgang J. Choyke and Robert P. Devaty
Chapter 12 New Materials: Semiconductors for Solar Cells (pages 715โ€“769): Hans Joachim Moller
Chapter 13 New Materials: Gallium Nitride (pages 771โ€“808): Eicke R. Weber, Joachim Kruger and Christian Kisielowski


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