✦ LIBER ✦

Hall and drift mobilities in molecular beam epitaxial grown GaAs

✍ Scribed by V. W. L. Chin; T. Osotchan; M. R. Vaughan; T. L. Tansley; G. J. Griffiths; Z. Kachwalla

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

GaAsN/GaAs and InGaAsN/GaAs heterostruct

✍ A. Yu. Egorov; A. E. Zhukov; A. R. Kovsh; V. M. Ustinov; V. V. Mamutin; S. V. Iv 📂 Article 📅 1998 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 46 KB

Defects in molecular beam epitaxial GaAs

✍ N. Hozhabri; S. C. Sharma; R. N. Pathak; K. Alavt 📂 Article 📅 1994 🏛 Springer US 🌐 English ⚖ 537 KB

Improvedp/njunctions in Ge-doped GaAs gr

✍ K. Ploog; A. Fischer; H. Künzel 📂 Article 📅 1979 🏛 Springer 🌐 English ⚖ 559 KB

Molecular beam epitaxy AlGaAs/GaAs grown

✍ Y.C. Pao; D. Liu; J.S. Harris Jr. 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 321 KB

Low-frequency noise in GaAs layers grown

✍ Munecazu Tacano; Yoshinobu Sugiyama; Takashi Taguchi; Hajime Soga 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 450 KB

Silicon incorporation behaviour in GaAs

✍ K. Sato; M.R. Fahy; M.J. Ashwin; B.A. Joyce 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 464 KB