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H2S molecular beam passivation of Ge(0 0 1)

✍ Scribed by C. Merckling; Y.C. Chang; C.Y. Lu; J. Penaud; M. El-Kazzi; F. Bellenger; G. Brammertz; M. Hong; J. Kwo; M. Meuris; J. Dekoster; M.M. Heyns; M. Caymax

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 631 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.09.012

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✦ Synopsis

A fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the electrical passivation of the interface with the high-k gate dielectric. In this paper, we investigate the passivation of p-Ge(0 0 1) using molecular H 2 S. The modification of the semiconductor surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. MOS capacitors are fabricated to extract interface state density, and finally we demonstrate the efficiency of the passivation scheme using a combination with an ultra thin Al interlayer.

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H2S molecular beam passivation of Ge(0&#xa0;0&#xa0;1)

✦ Synopsis

H2S molecular beam passivation of Ge(0 0 1)