H atom mobilies in xenon matrices. Dependence on matrix morphology
✍ Scribed by D. LaBrake; Eric Weitz
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 558 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0009-2614
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✦ Synopsis
The concentration of H atoms in xenon matrices, produced by 193 nm photolysis of HBr, has been monitored by laser-induced emission from xenon-hydrogen exciplexes. At 10 K the H-atom concentration remains unchanged over the course of five days. At 40 K the majority of atom loss occurs on a timescale of minutes and is sensitive to matrix preparation. At 40 K diffusion coefficients for the major H atom loss processes have been estimated as 5.0~ IO-l4 cm2/s and 2.6 X 10-'3cm'/s for xenon matrices deposited at 28 and 10 K respectively. An upper limit of z lo-" cm'/s can be obtained for the diffusion coefficient at 10 K. The effect of matrix morphology on atom mobilities is discussed.