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Growth temperature dependences of InN films grown by MOCVD

✍ Scribed by Cuibai Yang; Xiaoliang Wang; Hongling Xiao; Xiaobin Zhang; Guoxin Hu; Junxue Ran; Cuimei Wang; Jianping Li; Jinmin Li; Zhanguo Wang

Book ID
108063768
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
534 KB
Volume
255
Category
Article
ISSN
0169-4332

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## Abstract We present a systematic study of the influence of the growth temperature on the point defect landscape in metal‐organic chemical vapor deposition (MOCVD) InN. State‐of‐the‐art InN layers were grown at temperatures from 500 to 550 °C and positron annihilation spectroscopy has been used t