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Growth reactions and mechanisms in chemical beam epitaxy (CBE)

✍ Scribed by T. Martin; C.R. Whitehouse; P.A. Lane

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
789 KB
Volume
120
Category
Article
ISSN
0022-0248

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Growth mechanism of InAs–InSb heterostru
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We report on the particle diameter dependence of the growth rate of the InSb segment of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy. The analysis of the growth rate reveals that the growth is limited by the Gibbs-Thomson effect and the effect of NW lateral dimensions on the n