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Growth Rate of ZnS on GaP in Photo-assisted Chemical Transport Growth: Influence of Power Density and Substrate Temperature

✍ Scribed by KRASNOV, A. N. ;RUDA, H. E.


Book ID
110239651
Publisher
Springer
Year
1998
Tongue
English
Weight
138 KB
Volume
17
Category
Article
ISSN
0261-8028

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## Abstract The use of diamond as a material for high power electronics requires high‐purity monocrystalline thick diamond films. Hence it is extremely important to have perfect control of the morphology during the entire growth process, so that the useable surface be maximized and residual stresse