Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

✍ Scribed by Komatsu, Naoyoshi; Mitani, Takeshi; Takahashi, Tetsuo; Okamura, Masayuki; Kato, Tomohisa; Okumura, Hajime

• Book ID: 120413873
• Publisher: Trans Tech Publications, Ltd.
• Year: 2013
• Tongue: English
• Weight: 584 KB
• Volume: 740-742
• Category: Article
• ISSN: 1662-9752
• DOI: 10.4028/www.scientific.net/MSF.740-742.23