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Growth parameter optimization of short period ( < 50 Å) InGaAs/InP short period superlattices by chemical beam epitaxy for photonic devices

✍ Scribed by C. Rigo; A. Antolini; C. Cacciatore; C. Coriasso; L. Lazzarini; G. Salviati


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
342 KB
Volume
136
Category
Article
ISSN
0022-0248

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