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Growth of β-FeSi2 thin films on silicon (100) substrate for different annealing times by pulsed laser deposition

✍ Scribed by S.C. Xu; S.B. Gao; B.Y. Man; C. Yang; M. Liu; Y.Y. Ma; S.Z. Jiang; C.S. Chen; A.H. Liu; X.G. Gao; Z.C. Sun; B. Hu; C.C. Wang

Book ID
113940957
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
900 KB
Volume
86
Category
Article
ISSN
0042-207X

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Zinc oxide (ZnO) thin films have been prepared by pulsed laser deposition (PLD) technique at room temperature on quartz and single crystal silicon (1 0 0) substrates. The oxygen ambient gas pressure was attained at 6 Torr during the deposition. The deposited films were post-growth annealed in air at