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Growth of thick GaxAl1-xAs layers by liquid-phase epitaxy

✍ Scribed by L. E. Stone; K. Madden; R. W. Haisty

Book ID: 112817414
Publisher: Springer US
Year: 1972
Tongue: English
Weight: 738 KB
Volume: 1
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02660357

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## Abstract This paper is concerned with the investigation of the peculiarities of the application of liquid phase epitaxy for obtaining multilayer structures with heterojunctions in the AlAs–GaAs system. Segregational depletion of Al in liquid and in solid phases is characteristic of this system.