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Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

✍ Scribed by Takuya Tabata; Jihyun Paek; Yoshio Honda; Masahito Yamaguchi; Hiroshi Amano

Book ID
112182316
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
548 KB
Volume
9
Category
Article
ISSN
1862-6351

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πŸ“œ SIMILAR VOLUMES

Growth and characterization of InGaN by
Growth and characterization of InGaN by RF-MBE
✍ A. Kraus; S. Hammadi; J. Hisek; R. Buß; H. JΓΆnen; H. Bremers; U. Rossow; E. Saka πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 661 KB

In this contribution we report on the growth of coherently strained, pseudomorphic InGaN layers on GaN templates by RF-MBE. Structural properties characterized by HR-XRD exhibit good crystalline quality and homogeneity of the grown layers. The incorporation efficiency of In into the InGaN layer was