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Growth of highly homogeneous InSb single crystals

โœ Scribed by Kazutaka Terashima


Book ID
107789368
Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
555 KB
Volume
60
Category
Article
ISSN
0022-0248

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Growth of Si1โˆ’xGex bulk crystals with hi
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Compositionally homogeneous Si 0.52 Ge 0.48 bulk crystals were grown under a mild temperature gradient using a Si(seed)/Ge/Si(feed) sandwich structure for thermoelectric (TE) applications. The furnace temperature was kept constant for 300 h for the growth of homogeneous Si 1 ร€ x Ge x bulk crystal wi