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Growth of gallium antimonide by vertical Bridgman technique with planar crystal-melt interface

✍ Scribed by P.S. Dutta; K.S. Sangunni; H.L. Bhat; Vikram Kumar


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
627 KB
Volume
141
Category
Article
ISSN
0022-0248

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Bi 12 SiO 20 single crystals have been grown successfully by vertical Bridgman technique. During the crystal growth process, different axial vibration amplitudes of 50 Β΅m, 70 Β΅m and 100 Β΅m were applied with the same vibration frequency of 50 Hz. The effect of different axial vibration amplitudes on