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Growth of GaBN ternary solutions by organometallic vapor phase epitaxy

✍ Scribed by A. Y. Polyakov; M. Shin; M. Skowronski; D. W. Greve; R. G. Wilson; A. V. Govorkov; R. M. Desrosiers

Book ID
107457531
Publisher
Springer US
Year
1997
Tongue
English
Weight
566 KB
Volume
26
Category
Article
ISSN
0361-5235

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## Abstract We investigated the luminescence properties of the Eu‐doped GaN (GaN:Eu) grown at atmospheric (100 kPa) and low (10 kPa) pressures by organometallic vapor phase epitaxy (OMVPE). Although Eu concentration of atmospheric pressure GaN:Eu (AP‐GaN:Eu) is lower than that of low pressure GaN:E